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Windows 7 Keygen Prokon 2.4.13 Crack + Serial Number Prokon..1. Field of the Invention
This invention relates to a method for manufacturing a semiconductor device such as a non-volatile memory such as a flash memory or an EEPROM (Electrically Erasable Programmable Read Only Memory), and more particularly to a technique for improving the reliability of a semiconductor device.
2. Description of the Related Art
As a semiconductor device such as a semiconductor memory or a semiconductor logic circuit such as a CMOS type LSI, an element isolation technology between elements becomes important. In particular, in a memory circuit having a cell array in which the most important element is a transistor for data retention, techniques for forming a shallow trench isolation (STI) and a shallow trench etch-back isolation are employed.
The shallow trench isolation is a technique for isolating two elements of a memory circuit, which are electrically separated from each other and insulated by a deep trench. The shallow trench isolation is mainly employed for a 256 M bit or greater DRAM. The shallow trench etch-back isolation is a technique for shallowly forming trenches in a substrate and then forming the trenches for shallow trench isolation by etching the substrate by a predetermined thickness (see Patent Document 1, for example).
Generally speaking, in the non-volatile memory like the EEPROM or a flash memory, a MOS transistor for writing and reading data is used, which has a thin oxide film on its gate insulating film. This phenomenon occurs in the EEPROM or the flash memory when data is stored by changing a threshold voltage of a MOS transistor by injection/extraction of charges into/from a charge accumulation layer. Particularly, in a memory cell structure using a MOS transistor for writing and reading data, the charges stored in a floating gate are discharged when a writing operation is performed by a hot electron injection method (Hot Electron Injection-Write Operation: “HEI-Write”). Therefore, the data can be maintained for about ten years or longer.
However, when the charge injection/extraction method is employed, the written data sometimes becomes unstable due to generation of a
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