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. DNG Studio 5.5.2.0.32;. 90. 91. 92. 93. 94. 95. 96. 97. 98. 99. 100. 101. 102. 103. 104. 105. 106. 107. 108. 109.1. Field of the Invention
The present invention relates to a coating solution used for a photoresist for a lithographic process using a KrF excimer laser or an ArF excimer laser as a light source for producing a fine pattern in the manufacturing process of a semiconductor device, a liquid crystal display device, or the like.
2. Description of the Related Art
As a chemically amplified photoresist used as a photoresist for a KrF excimer laser, an aromatic-polymer-based photoresist has been known. However, recently, as a chemically amplified photoresist used as a photoresist for an ArF excimer laser, a polyhydroxystyrene having a small molecular weight of xcex1-hydroxystyrene or a novolak resin having an acrylate group is used.
In the lithographic process using a lithographic technique, it is necessary to form a fine pattern having a size equal to or less than half the wavelength of the light source. Therefore, in the case of using ArF excimer laser as a light source, it is necessary to make the wavelength of the light source shorter in comparison with KrF excimer laser. As the light source having a short wavelength, recently, the development of a lithographic technique using an ArF excimer laser having a wavelength of 193 nm (refer to, for example, JP-A-3-14664) has been well advanced. In the ArF excimer laser lithography, it is considered that the development of a photoresist having a high sensitivity, an improved resolution and an excellent etching resistance is indispensable. However, when a chemical amplification photoresist is used in an ArF excimer laser lithography, a basic skeleton including a protective group of a photoacid generator has a strong absorption in a short wavelength region and a problem arises in that a thickness of the photoresist film decreases in the short wavelength region. Furthermore, even when a photoresist is used, when an amount of the
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